- metal-oxide-semiconductor implantation
- Электроника: ионная имплантация для изготовления МОП-структур
Универсальный англо-русский словарь. Академик.ру. 2011.
Универсальный англо-русский словарь. Академик.ру. 2011.
Metal gate — A metal gate, in the context of a lateral Metal Oxide Semiconductor MOS stack, is just that the gate material is made from a metal. For decades, the industry had moved away from metal as the gate material in the MOS stack due to fabrication… … Wikipedia
Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 … Wikipedia
Ion implantation — is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as… … Wikipedia
integrated circuit — Electronics. a circuit of transistors, resistors, and capacitors constructed on a single semiconductor wafer or chip, in which the components are interconnected to perform a given function. Abbr.: IC Also called microcircuit. [1955 60] * * * ▪… … Universalium
transistor — /tran zis teuhr/, n. 1. Electronics. a semiconductor device that amplifies, oscillates, or switches the flow of current between two terminals by varying the current or voltage between one of the terminals and a third: although much smaller in… … Universalium
Monolayer doping — (MLD) is a well controlled, wafer scale surface doping technique first developed at the University of California, Berkeley, in 2007.[1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially … Wikipedia
Depletion-load NMOS logic — Depletion load nMOS/NMOS (n channel metal oxide semiconductor) is a form of nMOS logic family which uses depletion mode n type MOSFETs as load transistors as a method to enable single voltage operation and achieve greater speed than possible with … Wikipedia
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed … Wikipedia
DMOS — Zwei Leistungs MOSFETs im SMD Gehäuse D2PAK. Diese FETs können einen Strom von 30 A schalten. Ein Leistungs MOSFET (engl. Power MOSFET) ist eine spezialisierte Version eines Metall Oxid Halbleiter Feldeffekttransistors (MOSFET), der für das… … Deutsch Wikipedia
Power MOSFET — Zwei Leistungs MOSFETs im SMD Gehäuse D2PAK. Diese FETs können einen Strom von 30 A schalten. Ein Leistungs MOSFET (engl. Power MOSFET) ist eine spezialisierte Version eines Metall Oxid Halbleiter Feldeffekttransistors (MOSFET), der für das… … Deutsch Wikipedia
Technology CAD — (or Technology Computer Aided Design, or TCAD) is a branch of electronic design automation that models semiconductor fabrication and semiconductor device operation. The modeling of the fabrication is termed Process TCAD, while the modeling of the … Wikipedia